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Typical Performance Characteristics
Figure 1. On-Region Characteristics
400
100
Figure 2. Transfer Characteristics
400
100
150 C
-55 C
25 C
10
1
V GS = 10.0 V
7.0 V
5.0 V
3.5 V
3.0 V
2.5 V
* Notes :
1. 250 μ s Pulse Test
10
o
o
o
* Notes :
1. V DS = 20V
2. T C = 25 C
0.4
0.04
0.1
o
1
1
0
2. 250 μ s Pulse Test
2 4
6
V DS ,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1.60
V GS = 4.5V
V GS ,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
1000
150 C
25 C
1.55
100
o
o
1.50
V GS = 10V
10
Notes:
* Note : T J = 25 C
1.45
0
50
100 150 200 250
o
1
0.3
0.6
1. V GS = 0V
2. 250 μ s Pulse Test
0.9
1.2
I D , Drain Current [A]
Figure 5. Capacitance Characteristics
V SD , Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
30000
24000
Ciss = Cgs + Cgd ( Cds = shorted )
Coss = Cds + Cgd
Crss = Cgd
10
8
V DS = 25V
V DS = 20V
V DS = 15V
C iss
18000
6
12000
C oss
* Note:
1. V GS = 0V
4
2. f = 1MHz
6000
C rss
2
10
10
10
0
-1
0
1
20
0
0
* Note : I D = 80A
100 200 300
400
V DS , Drain-Source Voltage [V]
Q g , Total Gate Charge [nC]
?2007 Fairchild Semiconductor Corporation
FDA8440 Rev. C0
3
www.fairchildsemi.com
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